advanced power n-channel insulated gate electronics corp. features high speed switching low saturation voltage v ce(sat) =3.0v@i c =30a absolute maximum ratings , 1/8" from case for 5 seconds . notes: 1.pulse width limited by max . junction temperature . thermal data symbol rthj-c(igbt) rthj-c(diode) rthj-a electrical characteristics@ t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 500 na i ces --1ma v ce(sat) - 3 3.6 v - 3.8 - v v ge(th) 3-7v q g - 63 100 nc q ge -12- nc q gc -32- nc t d(on) -40- ns t r -45- ns t d(off) - 125 - ns t f - 430 860 ns e on - 1.3 - mj e off - 3.1 - mj c ies - 1400 2240 pf c oes - 120 - pf c res -15- pf v f - 1.7 2.5 v v f - 2.1 2.9 v t rr - 140 - ns q rr - 0.8 - uc data and specifications subject to change without notice + 30 60 bipolar transistor with frd. continuous collector current 30 a continuous collector current gate-emitter voltage a w a maximum lead temp. for soldering purposes f=1.0mhz gate-collector charge total gate charge parameter gate-to-emitter leakage current v ge =0v v ge =15v collector-emitter saturation voltage /w /w thermal resistance junction-case parameter value 0.6 thermal resistance junction-case 1.5 /w units AP30G120SW 1200v rating collector-emitter voltage units v 1200 rohs-compliant product co-pak, igbt with fr d parameter 40 300 operating junction temperature range -55 to 150 diode forward current diode pulse forward current v ge =+ 30v, v ce =0v t j t l maximum power dissipation test conditions storage temperature range 208 thermal resistance junction-ambient collector-emitter leakage current output capacitance v cc =500v v ce =1200v, v ge =0v turn-on delay time fall time turn-on switching loss gate-emitter charge gate threshold voltage turn-off switching loss i c @t c =25 t stg 20 p d @t c =25 -55 to 150 pulsed collector current 1 i cm i c @t c =100 i f @t c =25 i fm reverse transfer capacitance reverse recovery charge di/dt = 100 a/s forward voltage i f =10a forward voltage i f =20a reverse recovery time i f =10a electrical characteristics of diode@t j =25 (unless otherwise specified) v ce =30v input capacitance v ge =15v, i c =30a v ce =v ge , i c =250ua v cc =600v, i c =30a, v ge =15v, r g =5 ? , inductive load rise time turn-off delay time v ge =15v, i c =60a i c =30a symbol v ces v ge rohs complia n 201211302 a 30a v ces i c v 120 a 1 40 i f @t c =100 diode forward current 10 a g c e to-3p g c e
ap30g120s w fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature fig 5. gate threshold voltage fig 6. typical capacitance characterisitics v.s. junction temperature 2 0 40 80 120 160 0 4 8 12162024 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 0 20 40 60 80 100 120 0 4 8 12 16 20 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v 1 2 3 4 5 6 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =60a i c =30a v ge =15v 0.5 0.8 1.1 1.4 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) t c =150 o c 0 20 40 60 80 100 120 0246810 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 0 400 800 1200 1600 2000 2400 1 10 100 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150
ap30g120s w fig 7. turn-off soa fig 8. effective transient thermal impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig11. forward characteristic of fig 12. gate charge characterisitics diode 3 0 4 8 12 16 0 20406080 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c = 30a v cc =500v 2 4 6 8 10 048121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a t c =25 o c 2 4 6 8 10 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) t c = 150 o c 1 10 100 1000 1 10 100 1000 10000 v ce , collector-emitter voltage(v) i c , peak collector current(a) safe operating area v ge =15v t c =125 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v f , forward voltage (v) i f , forward current (a) t j =25 o c t j =150 o c i c =30a i c =15a i c =60a i c =30a i c =15a
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